Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|261-264
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 261-264
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Density Functional Theory on NV Center in 4H SiC
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :
Access to resources
Recommend
3D Raman Spectroscopy Investigation of Defects in 4H-SiC Epilayer
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
LACBED study of extended defects in 4H-SiC
By Texier M. Regula G. Lancin M. Pichaud B.
Philosophical Magazine Letters, Vol. 86, Iss. 9, 2006-09 ,pp. :
4H-SiC Defects Analysis by Micro Raman Spectroscopy
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Three-Dimensional Imaging of Extended Defects in 4H-SiC
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :