Passivation and Generation of States at P-Implanted Thermally Grown and Deposited N-Type 4H-SiC/SiO2 Interfaces

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|697-700

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 697-700

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