Publisher： Trans Tech Publications
E-ISSN： 1662-9752|2016|858|745-748
ISSN： 0255-5476
Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 745-748
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Study of 4H-SiC Junction Barrier Schottky(JBS) Diode Using Various Junction Structures
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Access to resources
Recommend
Impact of Stacking Fault on the I-V Characteristics of 4H-SiC Schottky Barrier Diode
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Improvement of I-V Characteristics of Schottky Barrier Diode by 4H-SiC Surface Planarization
Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. :
Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :