Relationship between C-Face Defects and Threshold-Voltage Instability in C-Face 4H-SiC MOSFETs Studied by Electrically Detected Magnetic Resonance

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|591-594

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 591-594

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