Investigation of the Interface Quality and Reliability of 4H-SiC MOS Structure with NO and Forming Gas Annealing Treatment

Publisher： Trans Tech Publications

E-ISSN： 1662-9752|2016|858|647-650

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 647-650

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Abstract

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