High Voltage Diffusion-Welded Stacks on the Basis of SiC Schottky Diodes

E-ISSN： 1662-9752|2016|858|790-794

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 790-794

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

SiC Schottky Diode Rectifier Bridge Represented as Diffusion-Welded Stack

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 697-700

Trans Tech Publications

Access to resources Recommend Favorite

4.5 kV SiC Junction Barrier Schottky Diodes with Low Leakage Current and High Forward Current Density

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 427-430

Trans Tech Publications

Access to resources Recommend Favorite

Simulation of 4H-SiC Trench Junction Barrier Schottky Diodes with High-k Dielectrics

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 431-434

Trans Tech Publications

Access to resources Recommend Favorite

Barrier Stability of Pt/4H-SiC Schottky Diodes Used for High Temperature Sensing

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 606-609

Trans Tech Publications

Access to resources Recommend Favorite

Anomalous Scatter of Forward Current-Voltage Characteristics of He⁺-Irradiated Ni/4H-SiC Schottky Diodes

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 749-752

Trans Tech Publications

Access to resources Recommend Favorite