Analysis of Gate Oxide Nitridation Effect on SiC MOSFETs by Using Hall Measurement and Split C–V Measurement

E-ISSN： 1662-9752|2016|858|441-444

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 441-444

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Measurement Issues Affecting Threshold-Voltage Instability Characterization of SiC MOSFETs

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 461-464

Trans Tech Publications

Access to resources Recommend Favorite

Instability of Critical Electric Field in Gate Oxide Film of Heavy Ion Irradiated SiC MOSFETs

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 673-676

Trans Tech Publications

Access to resources Recommend Favorite

Switching Performance of V-Groove Trench Gate SiC MOSFETs with Grounded Buried p⁺ Regions

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 505-508

Trans Tech Publications

Access to resources Recommend Favorite

Pragmatic Approach to the Characterization of SiC/SiO₂ Interface Traps near the Conduction Band with Split C-V and Hall Measurements

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 477-480

Trans Tech Publications

Access to resources Recommend Favorite

Comparative Evaluation of Commercial 1200 V SiC Power MOSFETs Using Diagnostic I-V Characterization at Cryogenic Temperatures

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 545-548

Trans Tech Publications

Access to resources Recommend Favorite