Investigation of Interface State Density with Varied SiO₂ Thickness in La₂O₃/SiO₂/4H-SiC MOS Capacitors

E-ISSN： 1662-9752|2016|858|689-692

ISSN： 0255-5476

Source： Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 689-692

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Flatband Voltage Shift Depending on SiO₂/SiC Interface Charges in 4H-SiC MOS Capacitors with AlON/SiO₂ Stacked Gate Dielectrics

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 681-684

Trans Tech Publications

Access to resources Recommend Favorite

Devitrification in SiO₂-B₂O₃-Al₂O₃-La₂O₃-TiO₂ Glass during the Infiltration of Ceramic Composite

Materials Science Forum, Vol. 2016, Iss. 881, 2017-02 ,pp. : 77-82

Trans Tech Publications

Access to resources Recommend Favorite

Total and Partial Photon Interactions of BaSO₄-Na₂O-B₂O₃-SiO₂

Materials Science Forum, Vol. 2016, Iss. 872, 2016-10 ,pp. : 138-144

Trans Tech Publications

Access to resources Recommend Favorite

An Investigation of Capacitance-Voltage Hysteresis in Al₂O₃/SiC MIS Capacitors

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 516-519

Trans Tech Publications

Access to resources Recommend Favorite

Effect on Catalytic Ability of Solid Super Acid SO

Materials Science Forum, Vol. 2014, Iss. 809, 2015-02 ,pp. : 916-923

Trans Tech Publications

Access to resources Recommend Favorite