Publisher: Trans Tech Publications
E-ISSN: 1662-9752|2016|858|765-768
ISSN: 0255-5476
Source: Materials Science Forum, Vol.2016, Iss.858, 2016-06, pp. : 765-768
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content
Alternative Highly Homogenous Drift Layer Doping for 650 V SiC Devices
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
Low Carrier Density Epitaxial Graphene Devices On SiC
SMALL, Vol. 11, Iss. 1, 2015-01 ,pp. :
6.5 kV n-Channel 4H-SiC IGBT with Low Switching Loss Achieved by Extremely Thin Drift Layer
Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. :
SiC Power Devices in Impedance Source Converters
Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. :