Formation Mechanisms of the Point Defects from the 4H-SiC (0001) Surface to the Interior Layers: First Principle Calculation

Publisher: Trans Tech Publications

E-ISSN: 1662-9795|2016|697|771-776

ISSN: 1013-9826

Source: Key Engineering Materials, Vol.2016, Iss.697, 2016-08, pp. : 771-776

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Abstract