Terrace sizes in molecular beam epitaxy

E-ISSN： 1286-4862|2|11|2107-2121

ISSN： 1155-4304

Source： Journal de Physique I, Vol.2, Iss.11, 1992-11, pp. : 2107-2121

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

Study of molecular beam epitaxy of cadmium telluride on sapphire

By Mikhailov V. Butashin A. Kanevsky V. Polyak L. Rakova E. Moslemov A. Kvartalov V.

Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques, Vol. 5, Iss. 3, 2011-06 ,pp. : 595-600

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Background doping of films in molecular beam epitaxy of silicon

By Kanter B. Nikiforov A. Pchelyakov O.

Technical Physics Letters, Vol. 24, Iss. 2, 1998-02 ,pp. : 91-93

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Growing nanocrystalline silicon on sapphire by molecular beam epitaxy

By Pavlov D. Shilyaev P. Korotkov E. Krivulin N.

Technical Physics Letters, Vol. 36, Iss. 6, 2010-06 ,pp. : 548-550

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

SILICON MOLECULAR BEAM EPITAXY : STATUS ; DEVICES ; TRENDS

Le Journal de Physique Colloques, Vol. 49, Iss. C4, 1988-09 ,pp. : C4-347-C4-355

Edp Sciences

Access to resources Recommend Favorite

SILICON MOLECULAR BEAM EPITAXY : A COMPREHENSIVE BIBLIOGRAPHY 1962-82

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-153-C5-172

Edp Sciences

Access to resources Recommend Favorite