Analysis of Large Impurity Atmospheres at Dislocations and Associated Point Defect Reactions in Differently n-Doped GaAs Crystals

Publisher: Edp Sciences

E-ISSN: 1286-4897|7|12|2339-2360

ISSN: 1155-4320

Source: Journal de Physique III, Vol.7, Iss.12, 1997-12, pp. : 2339-2360

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