Publisher： Edp Sciences
E-ISSN： 1286-4897|3|12|2165-2171
ISSN： 1155-4320
Source： Journal de Physique III, Vol.3, Iss.12, 1993-12, pp. : 2165-2171
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Related content
Access to resources
Recommend
Deep diffusion doping of macroporous silicon
By Astrova E. Voronkov V. Grekhov I. Nashchekin A. Tkachencko A.
Technical Physics Letters, Vol. 25, Iss. 12, 1999-12 ,pp. :
Delta Doping in Si and SiGe by LP(RT)CVD
Le Journal de Physique IV, Vol. 05, Iss. C5, 1995-06 ,pp. :
Diffusion studies with radioactive ions
Hyperfine Interactions, Vol. 223, Iss. 1-3, 2014-01 ,pp. :
Diffusion studies of vacancies and impurities
Journal de Physique et le Radium, Vol. 23, Iss. 10, 1962-10 ,pp. :