High speed (≥6 GHz) InGaAs/InP avalanche photodiodes grown by gas source molecular beam epitaxy with a thin quaternary grading layer for high bit rate (≥5 Gbit/s) systems

Publisher： Edp Sciences

E-ISSN： 1286-4897|3|9|1761-1767

ISSN： 1155-4320

Source： Journal de Physique III, Vol.3, Iss.9, 1993-09, pp. : 1761-1767

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