Dislocation-Point Defect Interaction Effect on Local Electrical Properties of Semiconductors

E-ISSN： 1286-4897|7|12|2293-2307

ISSN： 1155-4320

Source： Journal de Physique III, Vol.7, Iss.12, 1997-12, pp. : 2293-2307

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

POINT DEFECT - DISLOCATION INTERACTION IN MgO

Le Journal de Physique Colloques, Vol. 42, Iss. C5, 1981-10 ,pp. : C5-289-C5-294

Edp Sciences

Access to resources Recommend Favorite

STRUCTURE AND LOCAL ELECTRICAL PROPERTIES OF GRAIN BOUNDARIES IN POLYCRYSTALLINE SEMICONDUCTORS

Le Journal de Physique Colloques, Vol. 49, Iss. C5, 1988-10 ,pp. : C5-521-C5-531

Edp Sciences

Access to resources Recommend Favorite

DISLOCATION STUDIES.Atomistic calculations of interaction energies between point defect complexes and dislocations in ionic crystals

Le Journal de Physique Colloques, Vol. 41, Iss. C6, 1980-07 ,pp. : C6-135-C6-138

Edp Sciences

Access to resources Recommend Favorite

ATOMISTIC MODELS OF POINT-DEFECT/DISLOCATION INTERACTIONS IN OXIDES

Le Journal de Physique Colloques, Vol. 42, Iss. C3, 1981-06 ,pp. : C3-13-C3-29

Edp Sciences

Access to resources Recommend Favorite

THE DISLOCATION-GRAIN BOUNDARY INTERACTION AND ITS EFFECT ON THE BOUNDARY DYNAMIC PROPERTIES

Le Journal de Physique Colloques, Vol. 51, Iss. C1, 1990-01 ,pp. : C1-679-C1-683

Edp Sciences

Access to resources Recommend Favorite