Electronic and transport properties of T-graphene nanoribbon: Symmetry-dependent multiple Dirac points, negative differential resistance and linear current-bias characteristics

Author: Dai C. J.   Yan X. H.   Xiao Y.   Guo Y. D.  

Publisher: Edp Sciences

E-ISSN: 1286-4854|107|3|37004-37004

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.107, Iss.3, 2014-08, pp. : 37004-37004

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Abstract

Based on the tight-binding method and density functional theory, band structures and transport properties of T-graphene nanoribbons are investigated. By constructing and solving the tight-binding Hamiltonian, we derived the analytic expressions of the linear dispersion relation and Fermi velocity of Dirac-like fermions for armchair T-graphene nanoribbons. Multiple Dirac points, which are triggered by the mirror symmetry of armchair T-graphene nanoribbons, are observed. The number and positions of multiple Dirac points can be well explained by our analytic expressions. Tight-binding results are confirmed by the results from density functional calculations. Moreover, armchair T-graphene nanoribbons exhibit negative differential resistance, whereas zigzag T-graphene nanoribbons have linear current-bias voltage characteristics near the Fermi level.