The suppression of Curie temperature by Sr doping in diluted ferromagnetic semiconductor (La1−xSrx)(Zn1−yMny)AsO

Author: Ding Cui   Gong Xin   Man Huiyuan   Zhi Guoxiang   Guo Shengli   Zhao Yang   Wang Hangdong   Chen Bin   Ning F. L.  

Publisher: Edp Sciences

E-ISSN: 1286-4854|107|1|17004-17004

ISSN: 0295-5075

Source: EPL (EUROPHYSICS LETTERS), Vol.107, Iss.1, 2014-07, pp. : 17004-17004

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Abstract

$(\text{La}_{1-x}\text{Sr}_{x})(\text{Zn}_{1-y}\text{Mn}_{y})\text{AsO}$ is a two-dimensional diluted ferromagnetic semiconductor that has the advantage of decoupled charge and spin doping. The substitution of Sr2+ for La3+ and Mn2+ for Zn2+ into the parent semiconductor LaZnAsO introduces hole carriers and spins, respectively. This advantage enables us to investigate the influence of carrier doping on the ferromagnetic ordered state through the control of Sr concentrations in $(\text{La}_{1-x}\text{Sr}_{x})(\text{Zn}_{0.9}\text{Mn}_{0.1})\text{AsO}$ . 10% Sr doping results in a ferromagnetic ordering below $T_C \sim 30\ \text{K}$ . Increasing Sr concentration up to 30% heavily suppresses the Curie temperature and saturation moments. Neutron scattering measurements indicate that no structural transition occurs for $(\text{La}_{0.9}\text{Sr}_{0.1})(\text{Zn}_{0.9}\text{Mn}_{0.1})\text{AsO}$ below 300 K.

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