Retention loss in the ferroelectric (SrBi2Ta2O9)-insulator (HfO2)-silicon structure studied by piezoresponse force microscopy

Author： Zhang Z. H.   Zhong X. L.   Zhang Y.   Wang J. B.   Lu C. J.   Ye W. N.   Zhou Y. C.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|98|2|27011-27011

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.98, Iss.2, 2012-05, pp. : 27011-27011

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