Coulomb drag and high-resistivity behavior in double-layer graphene

Author： Peres N. M. R.   Lopes dos Santos J. M. B.   Castro Neto A. H.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|95|1|18001-18001

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.95, Iss.1, 2011-06, pp. : 18001-18001

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Drag Effect in Double-Layer Dipolar Fermi Gases

By  

Journal of Physics: Conference Series , Vol. 568, Iss. 1, 2014-12 ,pp. : 124-128

IOP Publishing

Access to resources Recommend Favorite

Enhanced intervalley scattering in artificially stacked double-layer graphene

By  

New Journal of Physics, Vol. 16, Iss. 8, 2014-08 ,pp. : 305-317

IOP Publishing

Access to resources Recommend Favorite

Coulomb oscillations in three-layer graphene nanostructures

By  

New Journal of Physics, Vol. 10, Iss. 12, 2008-12 ,pp. : 913-922

IOP Publishing

Access to resources Recommend Favorite

Characterization of vertical Au/β-Ga2O3 single-crystal Schottky photodiodes with MBE-grown high-resistivity epitaxial layer

By Liu X Z   Yue C   Xia C T   Zhang W L  

Chinese Physics B, Vol. 25, Iss. 1, 2016-01 ,pp. : 17201-17205

IOP Publishing

Access to resources Recommend Favorite

Diagnostics of high-resistivity GaAs wafers by microwave photoconductivity

By Vlasenko L.   Gorelenok A.   Emtsev V.   Kamanin A.   Kokhanovskii S.   Poloskin D.   Shmidt N.  

Technical Physics Letters, Vol. 27, Iss. 1, 2001-01 ,pp. : 9-10

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite