Effects of defects near source or drain contacts of carbon nanotube transistors

By Wang Neng-Ping   Xu Xiao-Jun  

EPL (EUROPHYSICS LETTERS), Vol. 100, Iss. 4, 2012-12 ,pp. : 47009-47009

Edp Sciences

Access to resources Recommend Favorite

Enhanced performance of isotype planar heterojunction photoresponsive organic field-effect transistors by using Ag source-drain electrodes

By Li Yao   Lv Wenli   Luo Xiao   Sun Lei   Zhou Maoqing   Zhang Jianping   Zhao Feiyu   Zhong Junkang   Peng Yingquan  

EPL (EUROPHYSICS LETTERS), Vol. 110, Iss. 1, 2015-04 ,pp. : 17006-17006

Edp Sciences

Access to resources Recommend Favorite

High-yield of memory elements from carbon nanotube field-effect transistors with atomic layer deposited gate dielectric

By  

New Journal of Physics, Vol. 10, Iss. 10, 2008-10 ,pp. : 265-280

IOP Publishing

Access to resources Recommend Favorite

Simulation of Drain Currents of Double Gated Armchair Graphene Nanoribbon Field-Effect Transistors by Solving Dirac "Like" Equation and Using Transfer Matrix Method

By  

Journal of Physics: Conference Series , Vol. 539, Iss. 1, 2014-10 ,pp. : 158-161

IOP Publishing

Access to resources Recommend Favorite

Variability and Reliability of Single-Walled Carbon Nanotube Field Effect Transistors

By Islam Ahmad Ehteshamul  

Electronics, Vol. 2, Iss. 4, 2013-09 ,pp. : 332-367

MDPI

Access to resources Recommend Favorite