Pressure dependence of dynamical and dielectric properties of 3C and 4H silicon carbide

E-ISSN： 1286-4854|35|3|195-200

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.35, Iss.3, 2010-03, pp. : 195-200

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Effect of pressure on the elastic properties of silicon carbide

By Davydov S.

Physics of the Solid State, Vol. 46, Iss. 7, 2004-07 ,pp. : 1200-1205

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of additional silicon on titanium/4H-SiC contacts properties

By Yong-Ping Zhang Zhi-Zhan Chen Wu-Yue Lu Jia-Hui Tan Yue Cheng Wang-Zhou Shi

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57303-57307

IOP Publishing

Access to resources Recommend Favorite

Pressure dependence of dielectric properties of the LiNaGe4O9 ferroelectric

By Sieradzki A. Cizman A. Komar J.

Phase Transitions: A Multinational Journal, Vol. 81, Iss. 11-12, 2008-11 ,pp. : 999-1004

Taylor & Francis Ltd

Access to resources Recommend Favorite

Frequency and voltage dependence of electric and dielectric properties of Au/TiO2/n-4H-SiC (metal-insulator-semiconductor) type Schottky barrier diodes

By TanrıkuluE E YıldızD E GünenA AltındalŞ

Physica Scripta, Vol. 90, Iss. 9, 2015-09 ,pp. : 95801-95807

IOP Publishing

Access to resources Recommend Favorite

Pressure-enhanced superconductivity in quasi-1D cobalt carbide Sc₃CoC₄

By Wang Enyu Zhu Xiyu Wen Hai-Hu

EPL (EUROPHYSICS LETTERS), Vol. 115, Iss. 2, 2016-08 ,pp. : 27007-27007

Edp Sciences

Access to resources Recommend Favorite