Susceptibility of local magnetic moments in phosphorus-doped silicon near the metal-insulator transition

Author： Schlager H. G.   H. v. Löhneysen H. G.  

Publisher： Edp Sciences

E-ISSN： 1286-4854|40|6|661-666

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.40, Iss.6, 2010-03, pp. : 661-666

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Susceptibility of local magnetic moments in phosphorous-doped siliconnear the metal-insulator transition

By Schlager H. G.   H. v. Löhneysen H. G.  

EPL (EUROPHYSICS LETTERS), Vol. 41, Iss. 5, 2010-03 ,pp. : 584-666

Edp Sciences

Access to resources Recommend Favorite

MAGNETIC PROPERTIES OF DISORDERED SYSTEMS NEAR A METAL-INSULATOR TRANSITION

By  

Le Journal de Physique Colloques, Vol. 49, Iss. C8, 1988-12 ,pp. : C8-1179-C8-1184

Edp Sciences

Access to resources Recommend Favorite

THE INSULATING SIDE OF THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 37, Iss. C4, 1976-10 ,pp. : C4-323-C4-327

Edp Sciences

Access to resources Recommend Favorite

Features of the conductivity and magnetoresistance of doped two-dimensional structures near a metal-insulator transition

By Agrinskaya N.   Kozub V.  

JETP Letters, Vol. 98, Iss. 5, 2013-11 ,pp. : 304-311

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

THE LOCAL SPIN-DENSITY-FUNCTIONAL METHOD : APPLICATION TO THE METAL-INSULATOR TRANSITION IN DOPED SEMICONDUCTORS

By  

Le Journal de Physique Colloques, Vol. 41, Iss. C5, 1980-07 ,pp. : C5-317-C5-323

Edp Sciences

Access to resources Recommend Favorite