Analytical model of spin filtering effect and its experimental verification in a forward-biased iron-metal–Al$_2$O$_3$–n-type GaAs tunneling structure under optical spin orientation

Publisher： Edp Sciences

E-ISSN： 1286-4854|82|3|37003-37003

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.82, Iss.3, 2008-05, pp. : 37003-37003

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Related content

SELECTIVE ETCHING OF n-TYPE GaAs IN A CrO3-HF-H2O SYSTEM UNDER LASER ILLUMINATION

By  

Le Journal de Physique Colloques, Vol. 43, Iss. C5, 1982-12 ,pp. : C5-313-C5-319

Edp Sciences

Access to resources Recommend Favorite

Formation of a nuclear spin polaron under optical orientation in GaAs-type semiconductors

By Merkulov I.  

Physics of the Solid State, Vol. 40, Iss. 6, 1998-06 ,pp. : 930-933

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Effect of nonequilibrium phonons on hot-electron spin relaxation in n-type GaAs quantum wells

By Zhang P.   Wu M. W.  

EPL (EUROPHYSICS LETTERS), Vol. 92, Iss. 4, 2010-12 ,pp. : 47009-47009

Edp Sciences

Access to resources Recommend Favorite

Effect of interfacial strain on spin injection and spin polarization of Co2CrAl/NaNbO3/Co2CrAl magnetic tunneling junction

By Cai Yongqing   Bai Zhaoqiang   Yang Ming   Feng Yuan Ping  

EPL (EUROPHYSICS LETTERS), Vol. 99, Iss. 3, 2012-08 ,pp. : 37001-37001

Edp Sciences

Access to resources Recommend Favorite

Interface states in Al2O3/AlGaN/GaN metal-oxide-semiconductor structure by frequency dependent conductance technique

By Xue-Yang Liao   Kai Zhang   Chang Zeng   Xue-Feng Zheng   Yun-Fei En   Ping Lai   Yue Hao  

Chinese Physics B, Vol. 23, Iss. 5, 2014-05 ,pp. : 57301-57305

IOP Publishing

Access to resources Recommend Favorite