Transverse “resistance overshoot” in a $\chem{Si/SiGe}$ two-dimensional electron gas in the quantum Hall effect regime

E-ISSN： 1286-4854|69|6|997-1002

ISSN： 0295-5075

Source： EPL (EUROPHYSICS LETTERS), Vol.69, Iss.6, 2005-03, pp. : 997-1002

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