Epitaxial lanthanide oxide thin films on Si for high-k gate dielectric application: Growth optimization and defect passivation

Publisher： Cambridge University Press

E-ISSN： 2044-5326|32|4|699-716

ISSN： 0884-2914

Source： Journal of Materials Research, Vol.32, Iss.4, 2017-02, pp. : 699-716

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

New epitaxy paradigm in epitaxial self-assembled oxide vertically aligned nanocomposite thin films

By  

Journal of Materials Research, Vol. 32, Iss. 21, 2017-07 ,pp. : 4054-4066

Cambridge University Press

Access to resources Recommend Favorite

SELECTIVE REMOVAL OF HIGH-K GATE DIELECTRICS

By Shamiryan D.   Baklanov M.   Claes M.   Boullart W.   Paraschiv V.  

Chemical Engineering Communications, Vol. 196, Iss. 12, 2009-12 ,pp. : 1475-1535

Taylor & Francis Ltd

Access to resources Recommend Favorite

Dielectric properties of SiO2–TiO2–Al2O3 thin films prepared by sol-gel method for humidity sensors

By Plško Alfonz   Faturíková Katarína   Liška Marek   Pagáčová Jana   Papučová Iveta   Šulcová Jana  

Physics and Chemistry of Glasses - European Journal of Glass Science and Technology Part B, Vol. 53, Iss. 1, 2012-02 ,pp. : 1-6

Society of Glass Technology

Access to resources Recommend Favorite

Cerium silicate-based thin-film apatites: high conductivity and solid oxide fuel cell application

By  

MRS Communications, Vol. 7, Iss. 2, 2017-04 ,pp. : 199-205

Cambridge University Press

Access to resources Recommend Favorite

Thin Films and Interfaces at High Pressure

By Jakob Thomas   Kleideiter Gerd   Knoll Wolfgang  

International Journal of Polymer Analysis and Characterization, Vol. 9, Iss. 1-3, 2004-01 ,pp. : 153-175

Taylor & Francis Ltd

Access to resources Recommend Favorite