Analysis and design of an efficient, fully integrated 1–8 GHz traveling wave power amplifier in 180 nm CMOS

By  

International Journal of Microwave and Wireless Technologies, Vol. 1, Iss. 5, 2009-10 ,pp. : 415-422

Cambridge University Press

Access to resources Recommend Favorite

A 60 GHz eight-element phased-array receiver front-end in 0.25 µm SiGe BiCMOS technology

By  

International Journal of Microwave and Wireless Technologies, Vol. 4, Iss. 6, 2012-12 ,pp. : 579-594

Cambridge University Press

Access to resources Recommend Favorite

Fully integrated 60 GHz transceiver in SiGe BiCMOS, RF modules, and 3.6 Gbit/s OFDM data transmission

By  

International Journal of Microwave and Wireless Technologies, Vol. 3, Iss. 2, 2011-04 ,pp. : 139-145

Cambridge University Press

Access to resources Recommend Favorite

J-band amplifier design using gain-enhanced cascodes in 0.13 μm SiGe

By  

International Journal of Microwave and Wireless Technologies, Vol. 7, Iss. 3-4, 2015-06 ,pp. : 339-347

Cambridge University Press

Access to resources Recommend Favorite

A high-gain high-power amplifier MMIC for V-band applications using 100 nm AlGaN/GaN dual-gate HEMTs

By  

International Journal of Microwave and Wireless Technologies, Vol. 4, Iss. 3, 2012-06 ,pp. : 267-274

Cambridge University Press

Access to resources Recommend Favorite