Material engineering for silicon tunnel field-effect transistors: isoelectronic trap technology

Publisher： Cambridge University Press

E-ISSN： 2159-6867|7|3|541-550

ISSN： 2159-6859

Source： MRS Communications, Vol.7, Iss.3, 2017-08, pp. : 541-550

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

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