An accurate parasitic parameters extraction method based on FW‐EM for AlGaN/GaN HEMT up to 110 GHz

Publisher： John Wiley & Sons Inc

E-ISSN： 1099-1204|31|1|jnm.2270-jnm.2270

ISSN： 0894-3370

Source： INTERNATIONAL JOURNAL OF NUMERICAL MODELLING: ELECTRONIC NETWORKS, DEVICES AND FIELDS, Vol.31, Iss.1, 2018-01, pp. : n/a-n/a

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