Resistive Switching in Li‐Doped ZnO Films

E-ISSN： 1862-6319|215|1|pssa.201700353-pssa.201700353

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.215, Iss.1, 2018-01, pp. : n/a-n/a

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

The Resistive Switching Behavior of ZnO Films Depending on Li Dopant Concentration and Electrode Materials

Advances in Science and Technology, Vol. 2016, Iss. 99, 2017-01 ,pp. : 75-80

Trans Tech Publications

Access to resources Recommend Favorite

Effect of cation and anion defects on the resistive switching polarity of ZnO_x thin films

By Wu Xinghui Xu Zhimou Liu Binbing Sun Tangyou Zhao Wenning Liu Sisi Ma Zhichao Zhao Fei Wang Shuangbao Zhang Xueming Liu Shiyuan Peng Jing

Applied Physics A, Vol. 114, Iss. 3, 2014-03 ,pp. : 847-852

Springer Publishing Company

Access to resources Recommend Favorite

Shallow donor formation in phosphorus-doped ZnO thin films

By Heo Y.W.

Applied Physics A, Vol. 78, Iss. 1, 2004-01 ,pp. : 53-57

Springer Publishing Company

Access to resources Recommend Favorite

Pulsed laser deposition of aluminum-doped ZnO films at 355 nm

By Holmelund E.

Applied Physics A, Vol. 79, Iss. 4-6, 2004-09 ,pp. : 1137-1139

Springer Publishing Company

Access to resources Recommend Favorite

Structural and Optical Properties of Co-Doped ZnO Thin Films

By Peng Y.

Journal of Superconductivity: Incorporating Novel Magnetism, Vol. 18, Iss. 1, 2005-02 ,pp. : 97-103

Springer Publishing Company

Access to resources Recommend Favorite