Effects of the Trap Level in the Unintentionally Doped GaN Buffer Layer on Optimized p‐GaN Gate AlGaN/GaN HEMTs

Publisher： John Wiley & Sons Inc

E-ISSN： 1862-6319|215|2|pssa.201700368-pssa.201700368

ISSN： 1862-6300

Source： PHYSICA STATUS SOLIDI (A) APPLICATIONS AND MATERIALS SCIENCE, Vol.215, Iss.2, 2018-01, pp. : n/a-n/a

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