Effects of Grain Boundary Density on the Gas Sensing Properties of Triethylsilylethynyl‐Anthradithiophene Field‐Effect Transistors

Publisher： John Wiley & Sons Inc

E-ISSN： 2196-7350|5|3|admi.201701399-admi.201701399

ISSN： 2196-7350

Source： ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol.5, Iss.3, 2018-02, pp. : n/a-n/a

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