Electronic Transport and Ferroelectric Switching in Ion‐Bombarded, Defect‐Engineered BiFeO₃ Thin Films

E-ISSN： 2196-7350|5|3|admi.201700991-admi.201700991

ISSN： 2196-7350

Source： ADVANCED MATERIALS INTERFACES (ELECTRONIC), Vol.5, Iss.3, 2018-02, pp. : n/a-n/a

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