Interplay of strain and indium incorporation in InGaN/GaN dot-in-a-wire nanostructures by scanning transmission electron microscopy

Publisher： IOP Publishing

E-ISSN： 1361-6528|26|34|344002-344011

ISSN： 0957-4484

Source： Nanotechnology, Vol.26, Iss.34, 2015-01, pp. : 344002-344011

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