Related content

Determination of ordering induced birefringence in (Al)GaInP

By Wirth R.   Geng C.   Scholz F.   Hangleiter A.  

Journal of Electronic Materials, Vol. 27, Iss. 3, 1998-03 ,pp. : 122-126

Springer Publishing Company

Access to resources Recommend Favorite

Wafer-bonding AlGaInP light emitting diodes with pyramidally patterned metal reflector

By  

Journal of Semiconductors, Vol. 36, Iss. 2, 2015-02 ,pp. : 24011-24015

IOP Publishing

Access to resources Recommend Favorite

Correlation between dark current RTS noise and defects for AlGaInP multiple-quantum-well laser diode

By Yu'an Liu   Wenlang Lou  

Journal of Semiconductors, Vol. 35, Iss. 2, 2014-02 ,pp. : 24009-24013

IOP Publishing

Access to resources Recommend Favorite

A 2.05 eV AlGaInP sub-cell used in next generation solar cells

By Hongbo Lu   Xinyi Li   Wei Zhang   Dayong Zhou   Mengqi Shi   Lijie Sun   Kaijian Chen  

Journal of Semiconductors, Vol. 35, Iss. 9, 2014-09 ,pp. : 94010-94013

IOP Publishing

Access to resources Recommend Favorite

Exploring the wavelength range of InP/AlGaInP QDs and application to dual-state lasing

By  

Semiconductor Science and Technology, Vol. 30, Iss. 4, 2015-01 ,pp. : 44002-44009

IOP Publishing

Access to resources Recommend Favorite