[ h h l ]Orientation dependence of optoelectronic properties in InAsN/GaSb quantum well laser diodes with W and M design

Author： Ahmed A Ben   Ridene S.   Debbichi M.   Saïd M.   Bouchriha H.  

Publisher： IOP Publishing

ISSN： 0268-1242

Source： Semiconductor Science and Technology, Vol.28, Iss.6, 2013-06, pp. : 65006-65015

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