Obtaining nanodimensional layers of GaAsP solid solutions on GaAs by solid-state substitution reactions

Author： Vasil'ev V.   Gagis G.   Kuchinskii V.   Khvostikov V.   Marukhina E.  

Publisher： MAIK Nauka/Interperiodica

ISSN： 1063-7850

Source： Technical Physics Letters, Vol.39, Iss.5, 2013-05, pp. : 472-474

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Formation of A3B5 ternary solid solutions on GaSb plates by solid- state substitution reactions

By  

Journal of Physics: Conference Series , Vol. 572, Iss. 1, 2014-12 ,pp. : 179-182

IOP Publishing

Access to resources Recommend Favorite

Influence of the composition of the GaAsP solid solution on the Ag-GaAsP barrier height

By  

Journal of Physics: Conference Series , Vol. 690, Iss. 1, 2016-02 ,pp. : 215-218

IOP Publishing

Access to resources Recommend Favorite

Solid-state reactions in TiBx-GaAs contact structures upon rapid thermal annealing

By Milenin V.   Konakova R.  

Technical Physics Letters, Vol. 27, Iss. 7, 2001-07 ,pp. : 586-588

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

The synthesis and properties of epitaxial layers of (Si2)1−x (GaAs)x solid solutions on silicon substrates

By Sapaev B.   Saidov A.   Zaveryukhin B.  

Technical Physics Letters, Vol. 30, Iss. 1, 2004-01 ,pp. : 51-54

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite

Use of lead as a neutral solvent for obtaining solid Ga1−x InxAsySb1−y solutions

By Andreev I.   Kunitsyna E.   Solov’ev Yu.  

Technical Physics Letters, Vol. 25, Iss. 10, 1999-10 ,pp. : 792-793

MAIK Nauka/Interperiodica

Access to resources Recommend Favorite