Characterization of Crystalline Carbon Nitride Films Deposited on Si and Si 3 N 4 /Si Substrate by RF Magnetron Sputtering System with DC Bias

By Lee J.  

Journal of Electroceramics, Vol. 13, Iss. 1-3, 2004-07 ,pp. : 321-326

Springer Publishing Company

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A Deterministic Solver for the 1D Non-Stationary Boltzmann-Poisson System for GaAs Devices: Bulk GaAs and GaAs n⁺-n_i-n⁺ Diode

By Galler Martin   Schürrer Ferdinand  

Journal of Computational Electronics, Vol. 4, Iss. 3-4, 2005-12 ,pp. : 261-273

Springer Publishing Company

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Fabrication and characterization of co-planar type MEMS structures on SiO 2 /Si 3 N 4 membrane for gas sensors with dispensing method guided by micromachined wells

By Kim Soo-Ho   Park Joon-Shik   Lee In-Gyu  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 995-998

Springer Publishing Company

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Doping level-dependent dry-etch damage in n -type GaN

By Lee Ji-Myon   Kim Byung-Il   Park Seong-Ju  

Journal of Electroceramics, Vol. 17, Iss. 2-4, 2006-12 ,pp. : 227-230

Springer Publishing Company

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Is self-heating responsible for the current collapse in GaN HEMTs?

By Padmanabhan Balaji  

Journal of Computational Electronics, Vol. 11, Iss. 1, 2012-03 ,pp. : 129-136

Springer Publishing Company

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