Transport and optical properties of the layer semiconductor p-type GaSe doped with Li

ISSN： 1362-3036

Source： Philosophical Magazine Letters, Vol.79, Iss.8, 1999-08, pp. : 575-579

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Defect luminescence in undoped p-type GaSe

By Aydinli A.

Philosophical Magazine Letters, Vol. 81, Iss. 12, 2001-12 ,pp. : 859-867

Taylor & Francis Ltd

Access to resources Recommend Favorite

Layer‐Dependent Nonlinear Optical Properties and Stability of Non‐Centrosymmetric Modification in Few‐Layer GaSe Sheets

ANGEWANDTE CHEMIE INTERNATIONAL EDITION, Vol. 54, Iss. 4, 2015-01 ,pp. : 1185-1189

John Wiley & Sons Inc

Access to resources Recommend Favorite

Layer‐Dependent Nonlinear Optical Properties and Stability of Non‐Centrosymmetric Modification in Few‐Layer GaSe Sheets

ANGEWANDTE CHEMIE, Vol. 127, Iss. 4, 2015-01 ,pp. : 1201-1205

John Wiley & Sons Inc

Access to resources Recommend Favorite

Effect of layer structure on the electrical properties of contacts to p-type In 0.53 Ga 0.47 As/InP

By Leech P.W. Reeves G.K.

Thin Solid Films, Vol. 298, Iss. 1, 1997-04 ,pp. : 9-13

Elsevier

Access to resources Recommend Favorite

Electrical Transport Properties of Highly Aluminum Doped p-Type 4H-SiC

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 249-252

Trans Tech Publications

Access to resources Recommend Favorite