

Author: Lei C. H. Van Tendeloo G.
Publisher: Taylor & Francis Ltd
ISSN: 1362-3036
Source: Philosophical Magazine Letters, Vol.82, Iss.8, 2002-08, pp. : 433-442
Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.
Abstract
Related content


Electronic defects in In2O3 and In2O3:Mg thin films on r‐plane sapphire
PHYSICA STATUS SOLIDI (B) BASIC SOLID STATE PHYSICS, Vol. 370-1972, Iss. 10, 2015-10 ,pp. :








Ferroelectric domains in epitaxial PbTiO 3 and BaTiO 3 thin films on MgO(100)
By Kim S. Park Y. Kang Y. Park W. Baik S. Gruverman A.L.
Thin Solid Films, Vol. 312, Iss. 1, 1998-01 ,pp. :