Light induced changes in the defect structure of a-Si:H

By Britton D.T.   Sigcau Z.   Comrie C.M.   Kanguwe D.F.   Minani E.   Knoesen D.   Harting M.  

Thin Solid Films, Vol. 430, Iss. 1, 2003-04 ,pp. : 149-152

Elsevier

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The influence of preparation conditions on the photoluminescence spectra of light-emitting Si prepared by laser pulse irradiation of a-Si:H

By Pelant I.   El-Kader K.M.A.   Borusik O.   Chvoj Z.   Ulrych I.   Chab V.   Kocka J.   Dyer T.E.   Marshall J.M.   Stuchlik J.  

Thin Solid Films, Vol. 276, Iss. 1, 1996-04 ,pp. : 306-309

Elsevier

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Recombination at high charge carrier concentrations in a-Si:H films

By Kunst M.   Wunsch F.   von Aichberger S.  

Thin Solid Films, Vol. 383, Iss. 1, 2001-02 ,pp. : 274-276

Elsevier

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Determination of recombination and photogeneration parameters of a-Si:H using photoconductivity measurements

By Nowak M.   Grabowski A.   Tzanetakis P.  

Thin Solid Films, Vol. 283, Iss. 1, 1996-09 ,pp. : 75-80

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Femtosecond-laser-induced-crystallization and simultaneous formation of light trapping microstructures in thin a-Si:H films

By Nayak B.K.   Gupta M.C.  

Applied Physics A, Vol. 89, Iss. 3, 2007-11 ,pp. : 663-666

Springer Publishing Company

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