Improved interface properties of yttrium oxide buffer layer on silicon substrate for ferroelectric random access memory applications

By Lim D.-G.   Kwak D.-J.   Yi J.  

Thin Solid Films, Vol. 422, Iss. 1, 2002-12 ,pp. : 150-154

Elsevier

Access to resources Recommend Favorite

Characteristics of Cu and Zn films deposited on glass and stainless steel substrates at different substrate temperatures and angle of incidence

By Savaloni H.   Najmi S.B.  

Vacuum, Vol. 66, Iss. 1, 2002-06 ,pp. : 49-58

Elsevier

Access to resources Recommend Favorite

Nature of chemical states of sulfur embedded in atomic‐layer‐deposited HfO2 film on Ge substrate for interface passivation

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 1862-6254, Iss. 9, 2015-09 ,pp. : 511-515

John Wiley & Sons Inc

Access to resources Recommend Favorite

Nature of chemical states of sulfur embedded in atomic‐layer‐deposited HfO2 film on Ge substrate for interface passivation

By  

PHYSICA STATUS SOLIDI - RAPID RESEARCH LETTERS (ELECTRONIC), Vol. 9, Iss. 9, 2015-09 ,pp. : 511-515

John Wiley & Sons Inc

Access to resources Recommend Favorite

Suppression of impurity interdiffusion in heteroepitaxy by inserting a low-temperature buffer layer in between the epilayer and the substrate

By Song J.S.   Seo S.H.   Oh M.H.   Chang J.H.   Cho M.W.   Yao T.  

Journal of Crystal Growth, Vol. 261, Iss. 1, 2004-01 ,pp. : 159-163

Elsevier

Access to resources Recommend Favorite