Defects created in N-doped 4H-SiC in the brittle regime: Stacking fault multiplicity and dislocation cores

Author： Lancin M. Texier M. Regula G. Pichaud B.

ISSN： 1478-6443

Source： Philosophical Magazine, Vol.89, Iss.15, 2009-05, pp. : 1251-1266

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Stacking faults in intrinsic and N-doped 4H-SiC: true influence of the N-doping on their multiplicity

By Regula Gabrielle

Philosophical Magazine, Vol. 93, Iss. 10-12, 2013-04 ,pp. : 1317-1325

Taylor & Francis Ltd

Access to resources Recommend Favorite

Temperature Dependent Stability of Stacking Fault in Highly Nitrogen-Doped 4H-SiC Crystals

Materials Science Forum, Vol. 2016, Iss. 858, 2016-06 ,pp. : 109-112

Trans Tech Publications

Access to resources Recommend Favorite

Stacking fault energy of 6H-SiC and 4H-SiC single crystals

By Hong M. H. Samant A. V. Pirouz P.

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 4, 2000-04 ,pp. : 919-935

Taylor & Francis Ltd

Access to resources Recommend Favorite

Investigation of the Surface Morphology and Stacking Fault Nucleation on the (000-1)C Facet of Heavily Nitrogen-Doped 4H-SiC Boules

Materials Science Forum, Vol. 2017, Iss. 897, 2017-06 ,pp. : 189-192

Trans Tech Publications

Access to resources Recommend Favorite

Identification of Stacking Faults by UV Photoluminescence Imaging Spectroscopy on Thick, Lightly-Doped n-Type 4°-off 4H-SiC Epilayers

Materials Science Forum, Vol. 2015, Iss. 821, 2015-07 ,pp. : 323-326

Trans Tech Publications

Access to resources Recommend Favorite