Composition-dependent structural, optical and electrical properties of In x Ga 1−x N (0.5 ≤ x ≤ 0.93) thin films grown by modified activated reactive evaporation

Author: Meher S.  

Publisher: Springer Publishing Company

ISSN: 0022-2461

Source: Journal of Materials Science, Vol.48, Iss.3, 2013-02, pp. : 1196-1204

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