Defect structure at a CdTe(111)/GaAs(001) interface

Author： Angelo J.E.   Gerberich W.W.   Franciosi A.   Bratina G.   Sorba L.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.271, Iss.1, 1995-12, pp. : 117-121

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Defect luminescence bands in MOCVD-grown CdTe on GaAs

By Kunert H.W.   Brink D.J.   Gouws G.J.  

Thin Solid Films, Vol. 268, Iss. 1, 1995-11 ,pp. : 98-101

Elsevier

Access to resources Recommend Favorite

Structure of the wafer fused InP (001)-GaAs (001) interface

By Sagalowicz L.   Rudra A.   Syrbu A.   Behrend J.  

Philosophical Magazine Letters, Vol. 76, Iss. 6, 1997-12 ,pp. : 445-452

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of thermal annealing on the structural and optical properties of CdTe(111)/GaAs(100) heterostructures

By Kang T.W.   Han M.S.   Kim M.D.   Kim T.W.  

Thin Solid Films, Vol. 310, Iss. 1, 1997-11 ,pp. : 132-137

Elsevier

Access to resources Recommend Favorite

Effects of annealing on structure of GaAs(001) nanoindentations

By Le Bourhis E.  

Philosophical Magazine Letters, Vol. 83, Iss. 3, 2003-01 ,pp. : 149-158

Taylor & Francis Ltd

Access to resources Recommend Favorite

Effect of Cu Atoms on the Band Structure of CdTe

By  

Materials Science Forum, Vol. 2016, Iss. 856, 2016-06 ,pp. : 153-156

Trans Tech Publications

Access to resources Recommend Favorite