Electroluminescence from aluminum-porous silicon reverse-biased Schottky diodes formed on the base of highly doped n-type polysilicon

Author: Lazarouk S.   Bondarenko V.   Pershukevich P.   La Monica S.   Maiello G.   Masini G.   Ferrari A.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.276, Iss.1, 1996-04, pp. : 296-298

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Abstract