Effect of external magnetic field on c-axis orientation and residual stress in AlN films

By Kusaka K.   Ao T.   Hanabusa T.   Tominaga K.  

Thin Solid Films, Vol. 332, Iss. 1, 1998-11 ,pp. : 247-251

Elsevier

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Control of preferential orientation of AlN films prepared by the reactive sputtering method

By Ishihara M.   Li S.J.   Yumoto H.   Akashi K.   Ide Y.  

Thin Solid Films, Vol. 316, Iss. 1, 1998-03 ,pp. : 152-157

Elsevier

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Effect of hydrogen addition on the preferred orientation of AlN films prepared by reactive sputtering

By Lee H.-C.   Lee K.-Y.   Yong Y.-J.   Lee J.-Y.   Kim G.-H.  

Thin Solid Films, Vol. 271, Iss. 1, 1995-12 ,pp. : 50-55

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The effects of deposition parameters on the crystallographic orientation of AlN films prepared by RF reactive sputtering

By Zhao Y.N.   Wang B.   He Z.  

Vacuum, Vol. 48, Iss. 5, 1997-05 ,pp. : 427-429

Elsevier

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Influences of bias voltage on the crystallographic orientation of AlN thin films prepared by long-distance magnetron sputtering

By Chu A.K.   Chao C.H.   Lee F.Z.   Huang H.L.  

Thin Solid Films, Vol. 429, Iss. 1, 2003-04 ,pp. : 1-4

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