Fabrication and characterization of MOS devices on 3C-SiC films grown by reactive magnetron sputtering on Si(111) substrates

Author: Wahab Q.   Turan R.   Hultman L.   Willander M.   Sundgren J.-E.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.287, Iss.1, 1996-10, pp. : 252-257

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Abstract