Stresses in strained GeSi stripes and quantum structures: Calculation using the finite element method and determination using micro-Raman and other measurements

Author： Jain S.C.   Maes H.E.   Pinardi K.  

Publisher： Elsevier

ISSN： 0040-6090

Source： Thin Solid Films, Vol.292, Iss.1, 1997-01, pp. : 218-226

Disclaimer: Any content in publications that violate the sovereignty, the constitution or regulations of the PRC is not accepted or approved by CNPIEC.

Previous Menu Next

Abstract

Related content

Measurements of residual stresses in thin films using micro-rotating-structures

By Zhang X.   Zhang T.-Y.   Zohar Y.  

Thin Solid Films, Vol. 335, Iss. 1, 1998-11 ,pp. : 97-105

Elsevier

Access to resources Recommend Favorite

Parallel implementation of the finite element method using compressed data structures

By Ribeiro F.   Ferreira I.  

Computational Mechanics, Vol. 41, Iss. 1, 2007-12 ,pp. : 31-48

Springer Publishing Company

Access to resources Recommend Favorite

Ge-Si intermixing in Ge quantum dots on Si

By Boscherini F.   Capellini G.   Di Gaspare L.   De Seta M.   Rosei F.   Sgarlata A.   Motta N.   Mobilio S.  

Thin Solid Films, Vol. 380, Iss. 1, 2000-12 ,pp. : 173-175

Elsevier

Access to resources Recommend Favorite

Formation of strained-silicon layer on thin relaxed-SiGe/SiO 2 /Si structure using SIMOX technology

By Sugiyama N.   Mizuno T.   Takagi S.   Koike M.   Kurobe A.  

Thin Solid Films, Vol. 369, Iss. 1, 2000-07 ,pp. : 199-202

Elsevier

Access to resources Recommend Favorite

Characterization of SiGe strained heterostructures grown by molecular beam epitaxy using a Si effusion cell

By Yaguchi H.   Yamamoto T.   Shiraki Y.  

Thin Solid Films, Vol. 321, Iss. 1, 1998-05 ,pp. : 241-244

Elsevier

Access to resources Recommend Favorite