Influence of low-temperature annealing on the dielectric characteristics and final parameters of SiO 2 MIS thin film transistors

Author: Estrada M.   Cerdeira A.   Matsumoto Y.   Melendez F.  

Publisher: Elsevier

ISSN: 0040-6090

Source: Thin Solid Films, Vol.298, Iss.1, 1997-04, pp. : 241-244

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Abstract