Site symmetry of Yb 3+ in In 0.5 Ga 0.5 P

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Elsevier

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Transport property of Sn-doped In 0.5 Ga 0.5 P layers grown by liquid phase epitaxy

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Thin Solid Films, Vol. 340, Iss. 1, 1999-02 ,pp. : 297-300

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Observation of the Burstein-Moss shift in heavily Te-doped In 0.5 Ga 0.5 P layers grown by liquid phase epitaxy

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Defect formation during Zn diffusion in GaP and GaSb

By Jager Ch.   Jager W.   Bosker G.   Popping J.   Stolwijk N.  

Philosophical Magazine. A. Physics of Condensed Matter. Defects and Mechanical Properties, Vol. 80, Iss. 1, 2000-01 ,pp. : 1-7

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Magneto-optical studies of 2D hole Landau levels and screening of donor states in p-type modulation doped Ga 0.5 Al 0.5 As/GaAs interfaces

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